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Transistor: N-MOSFET | PolarHT™ | unipolar | 100V | 200A | 800W | TO264

EB Kods: EB1572017433

Ražotāja preces kods: 
IXTK200N10P

Ražotājs, zīmols: 
IXYS

 21,09  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologyPolarHT™
Polarisationunipolar
Drain-source voltage100V
Drain current200A
Power dissipation800W
CaseTO264
Gate-source voltage±20V
On-state resistance7.5mΩ
MountingTHT
Gate charge240nC
Kind of packagetube
Kind of channelenhanced
Reverse recovery time100ns