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Transistor: N-MOSFET | Polar3™ | unipolar | 2.5kV | 0.33A | Idm: 1A | 104W

EB Kods: EB267763173

Ražotāja preces kods: 
IXTH05N250P3HV

Ražotājs, zīmols: 
IXYS

16,65 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 7 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyPolar3™
Polarisationunipolar
Drain-source voltage2.5kV
Drain current0.33A
Pulsed drain current1A
Power dissipation104W
CaseTO247HV
Gate-source voltage±20V
On-state resistance110Ω
MountingTHT
Gate charge10.5nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesstandard power mosfet
Reverse recovery time1.2µs