Tulkot latviski
Transistor: N-MOSFET | MDmesh™ || Plus | unipolar | 650V | 8A | Idm: 52A
Transistor: N-MOSFET | MDmesh™ || Plus | unipolar | 650V | 8A | Idm: 52A
EB Kods: EB1754203960
Ražotāja preces kods: STP18N60M2
Ražotāja preces kods:
STP18N60M2
Ražotājs, zīmols: STMicroelectronics
Ražotājs, zīmols:
STMicroelectronics
2,94 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | MDmesh™ || Plus |
| Polarisation | unipolar |
| Drain-source voltage | 650V |
| Drain current | 8A |
| Pulsed drain current | 52A |
| Power dissipation | 110W |
| Case | TO220-3 |
| Gate-source voltage | ±25V |
| On-state resistance | 0.28Ω |
| Mounting | THT |
| Kind of package | tube |
| Kind of channel | enhanced |
| Features of semiconductor devices | ESD protected gate |