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Transistor: N-MOSFET | MDmesh™ M6 | unipolar | 600V | 25A | Idm: 140A

EB Kods: EB201920348

Ražotāja preces kods: 
STW48N60M6-4

Ražotājs, zīmols: 
STMicroelectronics

12,39 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET
TechnologyMDmesh™ M6
Polarisationunipolar
Drain-source voltage600V
Drain current25A
Pulsed drain current140A
Power dissipation250W
CaseTO247-4
Gate-source voltage±25V
On-state resistance69mΩ
MountingTHT
Gate charge57nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesESD protected gate
Features of semiconductor devicesKelvin terminal