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Transistor: N-MOSFET | GigaMOS™ | unipolar | 100V | 420A | 1670W | TO264
Transistor: N-MOSFET | GigaMOS™ | unipolar | 100V | 420A | 1670W | TO264
EB Kods: EB978806560
Ražotāja preces kods: IXFK420N10T
Ražotāja preces kods:
IXFK420N10T
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
22,05 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | GigaMOS™ |
| Technology | HiPerFET™ |
| Technology | Trench™ |
| Polarisation | unipolar |
| Drain-source voltage | 100V |
| Drain current | 420A |
| Power dissipation | 1670W |
| Case | TO264 |
| Gate-source voltage | ±20V |
| On-state resistance | 2.6mΩ |
| Mounting | THT |
| Gate charge | 670nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Reverse recovery time | 140ns |