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Transistor: N-MOSFET | unipolar | 800V | 1A | 6W | PG-SOT223

EB Kods: EB534146748

Ražotāja preces kods: 
IPN80R4K5P7ATMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

1,94 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyCoolMOS™ P7
Polarisationunipolar
Drain-source voltage800V
Drain current1A
Power dissipation6W
CasePG-SOT223
Gate-source voltage±20V
On-state resistance4.5Ω
MountingSMD
Gate charge4nC
Kind of packagereel
Kind of channelenhanced
Features of semiconductor devicesESD protected gate