Tulkot latviski

Transistor: N-MOSFET | unipolar | 60V | 2.6A | Idm: 6A | 1W | SOT23

EB Kods: EB33157157

Ražotāja preces kods: 
SI2308CDS-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,39  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage60V
Drain current2.6A
Pulsed drain current6A
Power dissipation1W
CaseSOT23
Gate-source voltage±20V
On-state resistance144mΩ
MountingSMD
Gate charge4nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced