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Transistor: N-MOSFET | unipolar | 60V | 100A | 3.9W | TO252
Transistor: N-MOSFET | unipolar | 60V | 100A | 3.9W | TO252
EB Kods: EB1265550198
Ražotāja preces kods: DMTH6004SK3Q-13
Ražotāja preces kods:
DMTH6004SK3Q-13
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
1,68 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 100A |
Power dissipation | 3.9W |
Case | TO252 |
Gate-source voltage | ±20V |
On-state resistance | 3.8mΩ |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Application | automotive industry |