Tulkot latviski

Transistor: N-MOSFET | unipolar | 60V | 0.19A | Idm: 0.8A | 0.14W | SOT23

EB Kods: EB1621933313

Ražotāja preces kods: 
2N7002K-T1-GE3

Ražotājs, zīmols: 
VISHAY

0,14 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage60V
Drain current0.19A
Pulsed drain current0.8A
Power dissipation0.14W
CaseSOT23
Gate-source voltage±20V
On-state resistance
MountingSMD
Gate charge0.6nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate