Tulkot latviski

Transistor: N-MOSFET | unipolar | 600V | 8A | 53W | PG-TO252-3

EB Kods: EB1204881310

Ražotāja preces kods: 
IPD60R280P7ATMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

1,85 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologyCoolMOS™ P7
Polarisationunipolar
Drain-source voltage600V
Drain current8A
Power dissipation53W
CasePG-TO252-3
Gate-source voltage±20V
On-state resistance0.28Ω
MountingSMD
Gate charge18nC
Kind of channelenhanced
Features of semiconductor devicesESD protected gate