Tulkot latviski
Transistor: N-MOSFET | unipolar | 30V | 50A | Idm: 167A | 2.7W | 3.3x3.3mm
Transistor: N-MOSFET | unipolar | 30V | 50A | Idm: 167A | 2.7W | 3.3x3.3mm
EB Kods: EB1860911634
Ražotāja preces kods: CSD17308Q3T
Ražotāja preces kods:
CSD17308Q3T
Ražotājs, zīmols: TEXAS INSTRUMENTS
Ražotājs, zīmols:
TEXAS INSTRUMENTS
1,35 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | NexFET™ |
| Polarisation | unipolar |
| Drain-source voltage | 30V |
| Drain current | 50A |
| Pulsed drain current | 167A |
| Power dissipation | 2.7W |
| Case | VSON-CLIP8 |
| Gate-source voltage | ±10V |
| On-state resistance | 9.4mΩ |
| Mounting | SMD |
| Gate charge | 3.9nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |
| Dimensions | 3.3x3.3mm |