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Transistor: N-MOSFET | unipolar | 30V | 4.9A | Idm: 19.6A | 1.25W | SOT23

EB Kods: EB180888113

Ražotāja preces kods: 
PJA3400_R1_00001

Ražotājs, zīmols: 
PanJit Semiconductor

 0,48 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage30V
Drain current4.9A
Pulsed drain current19.6A
Power dissipation1.25W
CaseSOT23
Gate-source voltage±12V
On-state resistance60mΩ
MountingSMD
Gate charge5.7nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced