Tulkot latviski
Transistor: N-MOSFET | unipolar | 30V | 4.4A | Idm: 17.6A | 1.25W | SOT23
Transistor: N-MOSFET | unipolar | 30V | 4.4A | Idm: 17.6A | 1.25W | SOT23
EB Kods: EB882123386
Ražotāja preces kods: PJA3406_R1_00001
Ražotāja preces kods:
PJA3406_R1_00001
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,48 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 4.4A |
Pulsed drain current | 17.6A |
Power dissipation | 1.25W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 70mΩ |
Mounting | SMD |
Gate charge | 5.8nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |