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Transistor: N-MOSFET | unipolar | 30V | 284A | Idm: 1.8kA | 291W
Transistor: N-MOSFET | unipolar | 30V | 284A | Idm: 1.8kA | 291W
EB Kods: EB811205143
Ražotāja preces kods: PSMN0R9-30YLDX
Ražotāja preces kods:
PSMN0R9-30YLDX
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
4,26 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 284A |
Pulsed drain current | 1.8kA |
Power dissipation | 291W |
Case | LFPAK56E |
Case | PowerSO8 |
Case | SOT1023 |
On-state resistance | 1.44mΩ |
Mounting | SMD |
Gate charge | 109nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | logic level |