Tulkot latviski
Transistor: N-MOSFET | unipolar | 30V | 2.7A | Idm: 17A | 0.8W | SOT23
Transistor: N-MOSFET | unipolar | 30V | 2.7A | Idm: 17A | 0.8W | SOT23
EB Kods: EB1360979954
Ražotāja preces kods: IRLML6346TRPBF
Ražotāja preces kods:
IRLML6346TRPBF
Ražotājs, zīmols: INFINEON TECHNOLOGIES
Ražotājs, zīmols:
INFINEON TECHNOLOGIES
0,55 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | HEXFET® |
| Polarisation | unipolar |
| Drain-source voltage | 30V |
| Drain current | 2.7A |
| Pulsed drain current | 17A |
| Power dissipation | 0.8W |
| Case | SOT23 |
| Gate-source voltage | ±12V |
| On-state resistance | 80mΩ |
| Mounting | SMD |
| Gate charge | 2.9nC |
| Kind of channel | enhanced |
| Features of semiconductor devices | logic level |