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Transistor: N-MOSFET | unipolar | 30V | 2.6A | 1W | SOT23
Transistor: N-MOSFET | unipolar | 30V | 2.6A | 1W | SOT23
EB Kods: EB555126384
Ražotāja preces kods: ZXMN3A14FQTA
Ražotāja preces kods:
ZXMN3A14FQTA
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
1,00 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 2.6A |
Power dissipation | 1W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 95mΩ |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Application | automotive industry |