Tulkot latviski
Transistor: N-MOSFET | unipolar | 30V | 25A | Idm: 100A | 25W | TO252AA
Transistor: N-MOSFET | unipolar | 30V | 25A | Idm: 100A | 25W | TO252AA
EB Kods: EB1042296303
Ražotāja preces kods: PJD25N03_L2_00001
Ražotāja preces kods:
PJD25N03_L2_00001
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,60 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 25A |
Pulsed drain current | 100A |
Power dissipation | 25W |
Case | TO252AA |
Gate-source voltage | ±20V |
On-state resistance | 33mΩ |
Mounting | SMD |
Gate charge | 4.3nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |