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Transistor: N-MOSFET | unipolar | 30V | 1.9A | Idm: 12A | SOT23,TO236AB
Transistor: N-MOSFET | unipolar | 30V | 1.9A | Idm: 12A | SOT23,TO236AB
EB Kods: EB69398072
Ražotāja preces kods: PMV90ENER
Ražotāja preces kods:
PMV90ENER
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
0,63 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 1.9A |
Pulsed drain current | 12A |
Case | SOT23 |
Case | TO236AB |
On-state resistance | 0.118Ω |
Mounting | SMD |
Gate charge | 5.5nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |
Features of semiconductor devices | logic level |