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Transistor: N-MOSFET | unipolar | 30V | 1.9A | 0.5W | SuperSOT-3

EB Kods: EB147825905

Ražotāja preces kods: 
FDN357N

Ražotājs, zīmols: 
ONSEMI

 0,80 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage30V
Drain current1.9A
Power dissipation0.5W
CaseSuperSOT-3
Gate-source voltage±20V
On-state resistance0.14Ω
MountingSMD
Gate charge5.9nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level