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Transistor: N-MOSFET | unipolar | 30V | 16A | Idm: 100A | 3.4W | TO252

EB Kods: EB866683589

Ražotāja preces kods: 
DMN3009SK3-13

Ražotājs, zīmols: 
DIODES INCORPORATED

1,12 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage30V
Drain current16A
Pulsed drain current100A
Power dissipation3.4W
CaseTO252
Gate-source voltage±20V
On-state resistance9mΩ
MountingSMD
Gate charge42nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced