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Transistor: N-MOSFET | unipolar | 30V | 10A | Idm: 36A | 2W | DFN2020-8S
Transistor: N-MOSFET | unipolar | 30V | 10A | Idm: 36A | 2W | DFN2020-8S
EB Kods: EB649337875
Ražotāja preces kods: RF4E100AJTCR
Ražotāja preces kods:
RF4E100AJTCR
Ražotājs, zīmols: ROHM SEMICONDUCTOR
Ražotājs, zīmols:
ROHM SEMICONDUCTOR
0,80 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 30V |
| Drain current | 10A |
| Pulsed drain current | 36A |
| Power dissipation | 2W |
| Case | DFN2020-8S |
| Gate-source voltage | ±12V |
| On-state resistance | 12.4mΩ |
| Mounting | SMD |
| Gate charge | 13nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |