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Transistor: N-MOSFET | unipolar | 20V | 3A | 0.5W | SuperSOT-3

EB Kods: EB2041647670

Ražotāja preces kods: 
FDN339AN

Ražotājs, zīmols: 
ONSEMI

0,76 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage20V
Drain current3A
Power dissipation0.5W
CaseSuperSOT-3
Gate-source voltage±8V
On-state resistance61mΩ
MountingSMD
Gate charge10nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level