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Transistor: N-MOSFET | unipolar | 20V | 1.7A | 500mW | SuperSOT-3

EB Kods: EB1596171432

Ražotāja preces kods: 
FDN335N

Ražotājs, zīmols: 
ONSEMI

 0,68  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage20V
Drain current1.7A
Power dissipation0.5W
CaseSuperSOT-3
Gate-source voltage±8V
On-state resistance0.12Ω
MountingSMD
Gate charge5nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level