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Transistor: N-MOSFET | unipolar | 20V | 0.63A | Idm: 2A | 0.15W | SC75A

EB Kods: EB785940335

Ražotāja preces kods: 
SI1012CR-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,62 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage20V
Drain current0.63A
Pulsed drain current2A
Power dissipation0.15W
CaseSC75A
Gate-source voltage±8V
On-state resistance396mΩ
MountingSMD
Gate charge2nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate