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Transistor: N-MOSFET | unipolar | 100V | 43A | Idm: 215A | 2.9W | TO252

EB Kods: EB371563754

Ražotāja preces kods: 
DMT10H015SK3-13

Ražotājs, zīmols: 
DIODES INCORPORATED

 1,35 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current43A
Pulsed drain current215A
Power dissipation2.9W
CaseTO252
Gate-source voltage±20V
On-state resistance11.1mΩ
MountingSMD
Gate charge30.1nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced