Tulkot latviski

Transistor: N-MOSFET | unipolar | 100V | 29A | Idm: 184A | 71.4W | PDFN56

EB Kods: EB1959550673

Ražotāja preces kods: 
WMB175N10HG4

Ražotājs, zīmols: 
WAYON

1,15 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current29A
Pulsed drain current184A
Power dissipation71.4W
CasePDFN56
Gate-source voltage±20V
On-state resistance17.5mΩ
MountingSMD
Gate charge17nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Reverse recovery time30ns