Tulkot latviski

Transistor: N-MOSFET | unipolar | 100V | 200mA | Idm: 0.8A | 350mW | SOT23

EB Kods: EB1810442204

Ražotāja preces kods: 
WM10N02M

Ražotājs, zīmols: 
WAYON

 0,49 € 
Bez PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current0.2A
Pulsed drain current0.8A
Power dissipation0.35W
CaseSOT23
Gate-source voltage±20V
On-state resistance6Ω
MountingSMD
Gate charge1.5nC
Kind of packagereel
Kind of packagetape
Kind of channelenhancement