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Transistor: N-MOSFET | unipolar | 100V | 100A | 125W | VSONP8 | 5x6mm
Transistor: N-MOSFET | unipolar | 100V | 100A | 125W | VSONP8 | 5x6mm
EB Kods: EB1625212418
Ražotāja preces kods: CSD19531Q5AT
Ražotāja preces kods:
CSD19531Q5AT
Ražotājs, zīmols: TEXAS INSTRUMENTS
Ražotājs, zīmols:
TEXAS INSTRUMENTS
2,69 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | NexFET™ |
| Polarisation | unipolar |
| Drain-source voltage | 100V |
| Drain current | 100A |
| Power dissipation | 125W |
| Case | VSONP8 |
| Gate-source voltage | ±20V |
| On-state resistance | 5.3mΩ |
| Mounting | SMD |
| Gate charge | 37nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |
| Dimensions | 5x6mm |