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Transistor: N-MOSFET | unipolar | 100V | 100A | 125W | VSONP8 | 5x6mm
Transistor: N-MOSFET | unipolar | 100V | 100A | 125W | VSONP8 | 5x6mm
EB Kods: EB1625212418
Ražotāja preces kods: CSD19531Q5AT
Ražotāja preces kods:
CSD19531Q5AT
Ražotājs, zīmols: TEXAS INSTRUMENTS
Ražotājs, zīmols:
TEXAS INSTRUMENTS
2,96 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | NexFET™ |
Polarisation | unipolar |
Drain-source voltage | 100V |
Drain current | 100A |
Power dissipation | 125W |
Case | VSONP8 |
Gate-source voltage | ±20V |
On-state resistance | 5.3mΩ |
Mounting | SMD |
Gate charge | 37nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Dimensions | 5x6mm |