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Transistor: N-MOSFET | TrenchFET® | unipolar | 60V | 80.3A | Idm: 150A
Transistor: N-MOSFET | TrenchFET® | unipolar | 60V | 80.3A | Idm: 150A
EB Kods: EB1939843296
Ražotāja preces kods: SIR186LDP-T1-RE3
Ražotāja preces kods:
SIR186LDP-T1-RE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
2,37 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 60V |
| Drain current | 80.3A |
| Pulsed drain current | 150A |
| Power dissipation | 57W |
| Case | PowerPAK® SO8 |
| Gate-source voltage | ±20V |
| On-state resistance | 6.3mΩ |
| Mounting | SMD |
| Gate charge | 48nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |