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Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 100A | Idm: 400A
Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 100A | Idm: 400A
EB Kods: EB57741313
Ražotāja preces kods: SIRA90DP-T1-GE3
Ražotāja preces kods:
SIRA90DP-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
2,35 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 30V |
| Drain current | 100A |
| Pulsed drain current | 400A |
| Power dissipation | 66.6W |
| Case | PowerPAK® SO8 |
| Gate-source voltage | -16...20V |
| On-state resistance | 1.15mΩ |
| Mounting | SMD |
| Gate charge | 153nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |