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Transistor: N-MOSFET | TrenchFET® | unipolar | 150V | 51.6A | Idm: 100A
Transistor: N-MOSFET | TrenchFET® | unipolar | 150V | 51.6A | Idm: 100A
EB Kods: EB47644067
Ražotāja preces kods: SIR622DP-T1-RE3
Ražotāja preces kods:
SIR622DP-T1-RE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
1,55 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 150V |
Drain current | 51.6A |
Pulsed drain current | 100A |
Power dissipation | 104W |
Case | PowerPAK® SO8 |
Gate-source voltage | ±20V |
On-state resistance | 20.4mΩ |
Mounting | SMD |
Gate charge | 41nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |