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Transistor: N-MOSFET | Trench | unipolar | 20V | 3A | Idm: 10A | 1.25W
Transistor: N-MOSFET | Trench | unipolar | 20V | 3A | Idm: 10A | 1.25W
EB Kods: EB1041661994
Ražotāja preces kods: SI2302A-TP
Ražotāja preces kods:
SI2302A-TP
Ražotājs, zīmols: MICRO COMMERCIAL COMPONENTS
Ražotājs, zīmols:
MICRO COMMERCIAL COMPONENTS
0,28 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | Trench |
| Polarisation | unipolar |
| Drain-source voltage | 20V |
| Drain current | 3A |
| Pulsed drain current | 10A |
| Power dissipation | 1.25W |
| Case | SOT23 |
| Gate-source voltage | ±8V |
| On-state resistance | 0.11Ω |
| Mounting | SMD |
| Gate charge | 6nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |