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Transistor: N-MOSFET | SPLIT GATE TRENCH | unipolar | 60V | 50A | 38W

EB Kods: EB227582154

Ražotāja preces kods: 
YJG80G06A

Ražotājs, zīmols: 
YANGJIE TECHNOLOGY

1,42 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySPLIT GATE TRENCH
Polarisationunipolar
Drain-source voltage60V
Drain current50A
Pulsed drain current320A
Power dissipation38W
CaseDFN5060-8
Gate-source voltage±20V
On-state resistance5mΩ
MountingSMD
Gate charge67nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced