Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 6A | Idm: 16A | 91W

EB Kods: EB560275121

Ražotāja preces kods: 
G3R450MT17J

Ražotājs, zīmols: 
GeneSiC SEMICONDUCTOR

9,90 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.7kV
Drain current6A
Pulsed drain current16A
Power dissipation91W
CaseTO263-7
Gate-source voltage-5...15V
On-state resistance0.45Ω
MountingSMD
Gate charge18nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal