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Transistor: N-JFET/N-MOSFET | SiC | unipolar | cascode | 650V | 18.2A

EB Kods: EB829588009

Ražotāja preces kods: 
UJ3C065080B3

Ražotājs, zīmols: 
Qorvo (UnitedSiC)

 20,87 € 
Ar PVN / gb
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Product Properties

Type of transistorN-JFET/N-MOSFET
TechnologySiC
Polarisationunipolar
Kind of transistorcascode
Drain-source voltage650V
Drain current18.2A
Pulsed drain current65A
Power dissipation115W
CaseD2PAK
Gate-source voltage±25V
On-state resistance80mΩ
MountingSMD
Gate charge51nC
Features of semiconductor devicesESD protected gate