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Transistor: P-MOSFET x2 | unipolar | -20V | -700mA | Idm: -2.8A | 350mW

EB Kods: EB383165120

Ražotāja preces kods: 
PJT7801_R1_00001

Ražotājs, zīmols: 
PanJit Semiconductor

 0,38 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET x2
Polarisationunipolar
Drain-source voltage-20V
Drain current-700mA
Pulsed drain current-2.8A
Power dissipation0.35W
CaseSOT363
Gate-source voltage±8V
On-state resistance0.6Ω
MountingSMD
Gate charge2.2nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced