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Transistor: N/P-MOSFET | TrenchFET® | unipolar | 30/-30V | 2.5/-1.8A
Transistor: N/P-MOSFET | TrenchFET® | unipolar | 30/-30V | 2.5/-1.8A
EB Kods: EB758363087
Ražotāja preces kods: SI3552DV-T1-E3
Ražotāja preces kods:
SI3552DV-T1-E3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
0,95 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N/P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 30/-30V |
Drain current | 2.5/-1.8A |
Pulsed drain current | -7...8A |
Power dissipation | 1.15W |
Case | TSOP6 |
Gate-source voltage | ±20V |
On-state resistance | 360/175mΩ |
Mounting | SMD |
Gate charge | 3.6/3.2nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |