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Transistor: N-MOSFET x2 | unipolar | 20V | 8.5A | Idm: 56A | 1.56W | ESD
Transistor: N-MOSFET x2 | unipolar | 20V | 8.5A | Idm: 56A | 1.56W | ESD
EB Kods: EB898539213
Ražotāja preces kods: WM02DN085C
Ražotāja preces kods:
WM02DN085C
Ražotājs, zīmols: WAYON
Ražotājs, zīmols:
WAYON
0,89 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 20V |
Drain current | 8.5A |
Pulsed drain current | 56A |
Power dissipation | 1.56W |
Case | DFN2030-6 |
Gate-source voltage | ±12V |
On-state resistance | 10.9mΩ |
Mounting | SMD |
Gate charge | 22.1nC |
Kind of package | reel |
Kind of channel | enhancement |
Semiconductor structure | common drain |
Version | ESD |