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Transistor: N-MOSFET x2 | unipolar | 60V | 6.5A | Idm: 26A | 2W | SOP8

EB Kods: EB14203361

Ražotāja preces kods: 
SH8KC6TB1

Ražotājs, zīmols: 
ROHM SEMICONDUCTOR

1,20 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage60V
Drain current6.5A
Pulsed drain current26A
Power dissipation2W
CaseSOP8
Gate-source voltage±20V
On-state resistance46mΩ
MountingSMD
Gate charge7.6nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate