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Transistor: N-MOSFET x2 | unipolar | 60V | 4.5A | Idm: 18A | 2W | SOP8

EB Kods: EB308172403

Ražotāja preces kods: 
SP8K32HZGTB

Ražotājs, zīmols: 
ROHM SEMICONDUCTOR

1,25 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage60V
Drain current4.5A
Pulsed drain current18A
Power dissipation2W
CaseSOP8
Gate-source voltage±20V
On-state resistance77mΩ
MountingSMD
Gate charge7nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate