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Transistor: N-MOSFET x2 | unipolar | 60V | 250mA | Idm: 1A | 350mW
Transistor: N-MOSFET x2 | unipolar | 60V | 250mA | Idm: 1A | 350mW
EB Kods: EB412742824
Ražotāja preces kods: 2N7002KDW-AU_R1_000A1
Ražotāja preces kods:
2N7002KDW-AU_R1_000A1
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,33 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.25A |
Pulsed drain current | 1A |
Power dissipation | 0.35W |
Case | SOT363 |
Gate-source voltage | ±20V |
On-state resistance | 4Ω |
Mounting | SMD |
Gate charge | 0.8nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Application | automotive industry |