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Transistor: N-MOSFET x2 | unipolar | 60V | 250mA | Idm: 1A | 150mW | UMT6

EB Kods: EB1124348876

Ražotāja preces kods: 
UM6K31NTN

Ražotājs, zīmols: 
ROHM SEMICONDUCTOR

 0,37 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage60V
Drain current0.25A
Pulsed drain current1A
Power dissipation0.15W
CaseUMT6
Gate-source voltage±20V
On-state resistance12Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate