Tulkot latviski
Transistor: N-MOSFET x2 | unipolar | 60V | 0.3A | Idm: 1A | 0.58W | SOT563
Transistor: N-MOSFET x2 | unipolar | 60V | 0.3A | Idm: 1A | 0.58W | SOT563
EB Kods: EB105491695
Ražotāja preces kods: DMG1026UV-7
Ražotāja preces kods:
DMG1026UV-7
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
0,50 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.3A |
Pulsed drain current | 1A |
Power dissipation | 0.58W |
Case | SOT563 |
Gate-source voltage | ±20V |
On-state resistance | 1.8Ω |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |