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Transistor: N-MOSFET x2 | unipolar | 50V | 360mA | Idm: 1.2A | 236mW
Transistor: N-MOSFET x2 | unipolar | 50V | 360mA | Idm: 1.2A | 236mW
EB Kods: EB1442585020
Ražotāja preces kods: PJT138K-AU_R1_000A1
Ražotāja preces kods:
PJT138K-AU_R1_000A1
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,33 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 50V |
Drain current | 0.36A |
Pulsed drain current | 1.2A |
Power dissipation | 236mW |
Case | SOT363 |
Gate-source voltage | ±20V |
On-state resistance | 4.5Ω |
Mounting | SMD |
Gate charge | 1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Application | automotive industry |