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Transistor: N-MOSFET x2 | unipolar | 30V | 8.1A | 2.5W | SO8
Transistor: N-MOSFET x2 | unipolar | 30V | 8.1A | 2.5W | SO8
EB Kods: EB60945317
Ražotāja preces kods: IRL6372TRPBF
Ražotāja preces kods:
IRL6372TRPBF
Ražotājs, zīmols: INFINEON TECHNOLOGIES
Ražotājs, zīmols:
INFINEON TECHNOLOGIES
1,07 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Technology | HEXFET® |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 8.1A |
Power dissipation | 2.5W |
Case | SO8 |
Gate-source voltage | ±12V |
On-state resistance | 17.9mΩ |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | logic level |