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Transistor: N-MOSFET x2 | unipolar | 30V | 6A | 1.6W | SO8
Transistor: N-MOSFET x2 | unipolar | 30V | 6A | 1.6W | SO8
EB Kods: EB1799222906
Ražotāja preces kods: FDS6912A
Ražotāja preces kods:
FDS6912A
Ražotājs, zīmols: ONSEMI
Ražotājs, zīmols:
ONSEMI
1,10 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Technology | PowerTrench® |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 6A |
Power dissipation | 1.6W |
Case | SO8 |
Gate-source voltage | ±20V |
On-state resistance | 28mΩ |
Mounting | SMD |
Gate charge | 8.1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | logic level |