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Transistor: N-MOSFET x2 | unipolar | 30V | 6A | 1.6W | SO8

EB Kods: EB1799222906

Ražotāja preces kods: 
FDS6912A

Ražotājs, zīmols: 
ONSEMI

0,75 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET x2
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage30V
Drain current6A
Power dissipation1.6W
CaseSO8
Gate-source voltage±20V
On-state resistance28mΩ
MountingSMD
Gate charge8.1nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level