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Transistor: N-MOSFET x2 | unipolar | 30/30V | 30/60A | 2.2/2.5W | PQFN8

EB Kods: EB801607702

Ražotāja preces kods: 
FDMS3660S

Ražotājs, zīmols: 
ONSEMI

2,72 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage30/30V
Drain current30/60A
Power dissipation2.2/2.5W
CasePQFN8
Gate-source voltage±20/±12V
On-state resistance11/2.6mΩ
MountingSMD
Gate charge29/87nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced