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Transistor: N-MOSFET x2 | unipolar | 100V | 2.7A | 31W | SO8

EB Kods: EB1189474580

Ražotāja preces kods: 
FDS89161

Ražotājs, zīmols: 
ONSEMI

 2,05  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET x2
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage100V
Drain current2.7A
Power dissipation31W
CaseSO8
Gate-source voltage±20V
On-state resistance176mΩ
MountingSMD
Gate charge4.1nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced