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Transistor: N-MOSFET x2 | TrenchFET® | unipolar | 40V | 60A | Idm: 80A
Transistor: N-MOSFET x2 | TrenchFET® | unipolar | 40V | 60A | Idm: 80A
EB Kods: EB1011532938
Ražotāja preces kods: SI7938DP-T1-GE3
Ražotāja preces kods:
SI7938DP-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
2,14 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET x2 |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 40V |
| Drain current | 60A |
| Pulsed drain current | 80A |
| Power dissipation | 46W |
| Case | PowerPAK® SO8 |
| Gate-source voltage | ±20V |
| On-state resistance | 7mΩ |
| Mounting | SMD |
| Gate charge | 65nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |