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Transistor: N-MOSFET x2 | TrenchFET® | unipolar | 40V | 5.3A | Idm: 32A
Transistor: N-MOSFET x2 | TrenchFET® | unipolar | 40V | 5.3A | Idm: 32A
EB Kods: EB1561165467
Ražotāja preces kods: SQ4940AEY-T1_GE3
Ražotāja preces kods:
SQ4940AEY-T1_GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
1,37 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 40V |
Drain current | 5.3A |
Pulsed drain current | 32A |
Power dissipation | 1.3W |
Case | SO8 |
Gate-source voltage | ±20V |
On-state resistance | 29mΩ |
Mounting | SMD |
Gate charge | 43nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Application | automotive industry |